| 1. | The application of porous silicon is anticipated
最后对多孔硅的应用做出了展望。 |
| 2. | Investigation on optical properties of p - type lightly doped porous silicon
型轻掺多孔硅的发光特性研究 |
| 3. | Electrochemical fabrication and microstructure study of porous silicon
多孔硅的电化学形成及微结构研究 |
| 4. | Recent progress of research on porous silicon in rf microwave integrated circuits
微波电路中的研究进展 |
| 5. | Firstly , the porous silicon was modified by surface chemical modifying
首先，对多孔硅进行了化学表面修饰。 |
| 6. | Imaging processing in scanning electron microscopy photograph of porous silicon
多孔硅结构电镜图像的数字处理 |
| 7. | Effect of anodized conditions on field emission of porous silicon cold cathode
阳极氧化条件对多孔硅冷阴极场发射特性的影响 |
| 8. | Optical and electrical properties of the composite of porous silicon and poly n - vinylcarbazole
多孔硅与聚乙烯咔唑复合光电性能研究 |
| 9. | Effect of the structures of iron - passived porous silicon annealed in pure nitrogen ambients
高纯氮气退火处理对铁钝化多孔硅形貌的影响 |
| 10. | The orange - emitting as - anodized porous silicon was suspended in toluene by ultrasonic
气氛中350oc退火1 j ’时，黄绿光带的强度减弱。 |
